In this note, we are going to know about the Difference Between MOSFET and IGBT. Welcome to Poly Notes Hub, a leading destination for engineering notes for diploma and degree engineering students.
Author Name: Arun Paul.
Difference Between MOSFET and IGBT or MOSFET vs IGBT
Here is the list of difference between IGBT and MOSFET –
| Feature | MOSFET (Metal Oxide Semiconductor Field Effect Transistor) | IGBT (Insulated Gate Bipolar Transistor) |
|---|---|---|
| Control Type | Voltage controlled device | Voltage controlled device |
| Conduction Mechanism | Uses majority carriers (electrons for N channel, holes for P channel) | Uses both majority and minority carriers (combines MOSFET and BJT properties) |
| Switching Speed | Very fast (nanoseconds) | Moderate (microseconds) |
| Voltage Handling | Up to 600V (for power MOSFETs) | Up to 3.3kV or more |
| Current Handling | Limited by resistance | High current capability |
| Conduction Losses | Higher at high voltage due to RDS | Lower due to bipolar conduction |
| Switching Losses | Lower (suitable for high-frequency applications) | Higher due to tail current |
| Efficiency | Better at high frequencies | Better at low frequencies and high power |
| Applications | High-frequency applications: SMPS, RF amplifiers, DC to DC converters | Low-frequency, high-power applications: Inverters, motor drives, HVDC transmission |