Electrical Engineering MCQs | Best Website in 2024 - Poly Notes Hub
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Electrical Engineering MCQs | Best Website in 2024

In this page, you will get Electrical Engineering MCQs Questions Answers. We are divided this page in many sections where you will get different subjects with MCQs. Welcome to Poly Notes Hub, a leading destination of engineering notes for diploma and degree engineering students.

Author Name: Arun Paul.

  • Analog Electronics
  • Digital Electronics
  • Electrical Machines
  • Electronics Measurements
  • Circuit Theory
  • Building Electrification
  • Energy Conservation and Audit
  • Renewable Energy Sources
  • Switchgear and Protection

Category: Analog Electronics Quiz

MCQs of "What is Semiconductor and its types"

1 / 10

When a pure semiconductor heated, its resistance .............

2 / 10

The atomic number of silicon is ...........?

3 / 10

How many electrons are present in the Valance Band of the Germanium?

4 / 10

The atomic number of Germanium is ...........?

5 / 10

The energy required to break covalent bonds in Silicon material is .............?

6 / 10

The resistivity of a pure silicon is .............

7 / 10

A semiconductor has generally ......... valence electrons.

8 / 10

The most commonly used semiconductor is ................?

9 / 10

A semiconductor has ........... temperature coefficient of resistance.

10 / 10

A semiconductor is formed by ............... bonds.

Your score is

The average score is 50%

0%

Semiconductor Physics Part 1

1 / 10

When a pure semiconductor heated, its resistance .............

2 / 10

The atomic number of silicon is ...........?

3 / 10

How many electrons are present in the Valance Band of the Germanium?

4 / 10

The atomic number of Germanium is ...........?

5 / 10

The energy required to break covalent bonds in Silicon material is .............?

6 / 10

The resistivity of a pure silicon is .............

7 / 10

A semiconductor has generally ......... valence electrons.

8 / 10

The most commonly used semiconductor is ................?

9 / 10

A semiconductor has ........... temperature coefficient of resistance.

10 / 10

A semiconductor is formed by ............... bonds.

Your score is

The average score is 62%

0%

Semiconductor Physics Part 2

1 / 10

A hole in semiconductor is defined as .............

2 / 10

The barrier voltage for germanium diode is ...............

3 / 10

At room temperature, an intrinsic semiconductor acts like ...............

4 / 10

The leakage current in a pn junction is measured in ............

5 / 10

A reverse biased pn junction has resistance of ............

6 / 10

Atomic no of indium ............

7 / 10

The process of adding impurity is called .............

8 / 10

Barrier potential for a silicon diode is ...........

9 / 10

Holes are ........... charged.

10 / 10

............ are the minority carrier in N types Semiconductor.

Your score is

The average score is 0%

0%

Semiconductor Physics Part 3

1 / 10

A semiconductor has ........... temperature coefficient of resistance.

2 / 10

A semiconductor has generally ......... valence electrons.

3 / 10

The energy required to break covalent bonds in Silicon material is .............?

4 / 10

The resistivity of a pure silicon is .............

5 / 10

The atomic number of silicon is ...........?

6 / 10

When a pure semiconductor heated, its resistance .............

7 / 10

The leakage current in a pn junction is measured in ............

8 / 10

The barrier voltage for germanium diode is ...............

9 / 10

Barrier potential for a silicon diode is ...........

10 / 10

............ are the minority carrier in N types Semiconductor.

Your score is

The average score is 0%

0%

Semiconductor Physics Part 4

1 / 10

There are ....... types of charge carrier in semiconductor.

2 / 10

A trivalent impurity has ......... valence electrons.

3 / 10

The impurity level in an extrinsic semiconductor is about ............. of pure semiconductor.

4 / 10

Knee voltage for a silicon semiconductor is ........ V

5 / 10

In forward bias the junction offer ............... resistance.

6 / 10

At forward bias the pn junction has a resistance of .........

7 / 10

............... one of the highest resistance material.

8 / 10

Unit of resistivity is ..........

9 / 10

Forbidden energy gap for germanium semiconductor is ..........

10 / 10

Out of 10^10 semiconductor atoms, how many atoms provided a free electron?

Your score is

The average score is 0%

0%

Semiconductor Diode Part 1

1 / 10

A zener diode has ........

2 / 10

The crystal diode is a ............ device.

3 / 10

When the diode current is large, then bias is ........

4 / 10

The knee voltage of a crystal diode is approximately equal to ................

5 / 10

The PIV rating of a crystal diode is .......... that of equivalent vacuum diode.

6 / 10

A crystal diode has ........

7 / 10

A crystal diode has forward resistance of the order of ......

8 / 10

The reverse current in a diode is of the order of ......

9 / 10

The forward voltage drop across a silicon diode is about .......

10 / 10

A crystal diode is used as ............

Your score is

The average score is 58%

0%

Semiconductor Diode Part 2

1 / 10

A zener diode is always  ............. connected

2 / 10

A zener diode utilises  ........... characteristics for its operation.

3 / 10

In the breakdown region, a zener diode behaves like a ......... source.

4 / 10

A zener diode is destroyed if it  .............

5 / 10

A series resistance is connected in the zener circuit to ...........

6 / 10

A zener diode is a ............ device.

7 / 10

A zener diode has ............ breakdown voltage.

8 / 10

.............. rectifier has the lowest forward resistance.

9 / 10

Mains a.c. power is converted into d.c. power for .............

10 / 10

The disadvantage of a half wave rectifier is that the ...............

Your score is

The average score is 40%

0%

Semiconductor Diode Part 3

1 / 10

There is a need to transformer for ................

2 / 10

The PIV rating of each diode in a bridge rectifier is ........... that of the equivalent centre-tap rectifier.

3 / 10

For the same secondary voltage, the output voltage from a centre-tap rectifier is ............ than that of bridge rectifier.

4 / 10

If the PIV rating of a diode exceeded, ....................

5 / 10

A 10 V power supply would use ............ as filter capacitor.

6 / 10

A 1000 V power supply would use ............. as a filter capacitor.

7 / 10

The ............. filter circuit results in the best voltage regulation.

8 / 10

A half-wave rectifier has an input voltage of 240 V r.m.s. If the step-down transformer has a turns ratio of 8: 1, what is the peak load voltage ? Ignore diode drop.

9 / 10

The maximum efficiency of a half-wave rectifier is ...............

10 / 10

The most widely used rectifier is ...........

Your score is

The average score is 40%

0%

Special Purpose Diode Part 1

1 / 10

To display the digit 0 in a seven segment display

2 / 10

When the light increase, the reverse current in a photo-diode

3 / 10

The varactor is usually

4 / 10

The device associated with voltage controlled capacitance is a

5 / 10

When the reverse voltage increase, the junction capacitance

6 / 10

A photo-diode is normally

7 / 10

To display the digit 8 in a seven-segment indicator

8 / 10

The capacitance of a varactor diode increase when reverse voltage across it .............

9 / 10

A pn junction that radiates energy as light instead of as heat is called a ..............

10 / 10

Zener diodes are used primarily as ............

Your score is

The average score is 0%

0%

Transistors Part 1

1 / 10

A transistor has ............

2 / 10

The number of depletion layers in a transistor is ...........

3 / 10

The base of the transistor is ......... doped.

4 / 10

The region that has a biggest size in transistor is .............

5 / 10

In a PNP transistor, the current carriers are ..............

6 / 10

The collector of a transistor is ............ doped.

7 / 10

The transistor is a ........... operated device.

8 / 10

Full form BJT is .............

9 / 10

In a NPN transistor, ........ are the minority carrier.

10 / 10

The emitter of a transistor is ........... doped.

Your score is

The average score is 77%

0%

Transistor Part 2

1 / 10

In a transistor, the base current is about ............ of emitter current.

2 / 10

At the base-emitter junction of a transistor, one finds ...............

3 / 10

The input impedance of a transistor is ........

4 / 10

Most of the majority carriers from the emitter ...........

5 / 10

The base current of the transistor is .................

6 / 10

The value of β of transistor is ............

7 / 10

The collector base junction in a transistor has ..........

8 / 10

Input resistance for CC mode is about ............

9 / 10

The value of α is lies between .......

10 / 10

The most commonly used transistor arrangement is ...............

Your score is

The average score is 73%

0%

Transistor Biasing Part 1

1 / 10

The point of intersection of d.c. and a.c. load lines represents ...........

2 / 10

The circuit that provides the best stabilization of operation point is .........

3 / 10

For faithful amplification by a transistor circuit, the value of VCE should ...... for silicon transistor.

4 / 10

For proper operation of the transistor, its collector should have ............

5 / 10

For faithful amplification by a transistor circuit, the value of VBE should ............ for a silicon transistor.

6 / 10

Transistor biasing is generally provided by a .......

7 / 10

If biasing is not done in an amplifier circuit, it results in ..........

8 / 10

Operating point represents ..............

9 / 10

Transistor biasing is done to keep ......... in the circuit.

10 / 10

Transistor biasing represents ............ conditions.

Your score is

The average score is 2%

0%

Transistor Biasing Part 2

1 / 10

An ideal value of stability factor is......

2 / 10

The zero signal Collector Current is generally ....... mA in the initial stages of a transistor amplifier

3 / 10

If the maximum collector current due to signal alone is 3 mA, then zero signal collector current should be at least equal to ............

4 / 10

The disadvantage of base resistor method of transistor biasing is that it .....

5 / 10

The biasing circuit has a stability factor of 50. If due to temperature change, ICBO changes by 1uA, then IC will change by......

6 / 10

For good stabilization in voltage divider bias, the current I1 flowing through R1 and R2 should be equal to or greater than.......

7 / 10

The leakage current in a silicon transistor is about.........the leakage current in a germanium transistor.

8 / 10

The operating point is also called the ......

9 / 10

For proper amplification by a transistor circuit, the operating point should be located......of the d.c. load line

10 / 10

The operating point.....on the a.c. load line.

Your score is

The average score is 47%

0%

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Electrical Engineering MCQs | Best Website in 2024 - Poly Notes Hub
Electrical Engineering MCQs | Best Website in 2024 - Poly Notes Hub